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3N50L-TF3-TO-220F N Trench 650V 4A mos field filamentary semiconductor
3N50L-TF3-TO-220F N Trench 650V 4A mos field filamentary semiconductor
3N50L-TF3-TO-220F N Trench 650V 4A mos field filamentary semiconductor
3N50L-TF3-TO-220F N Trench 650V 4A mos field filamentary semiconductor

3N50L-TF3-TO-220F N Trench 650V 4A mos field filamentary semiconductor

ManufacturerShenzhen City Weiqua Semiconductor Ltd.
CategoryField effect tube (MOSFET)
Price1.82
BrandVBsemi / Microbian Semiconductor
Model3N50L-TF3-T
CoverTO-220F
Batch Number23+
FET TypeEnhanced
Vds650V
Leaking of polar currents (Id)4A
Leak-source conductive resistance (RDS On)2560 m
Fence power (Vgs)±20V
Fence charge (Qg)48nC
Reverse recovery timeI'm sorry.
Maximum deplete power3000.
Configure TypeSingle.
Working temperature range-55°C~150°C
Install TypeSurface loading technology
Application areaNew energy sources, domestic appliances, 3C digital, measuring instruments, intelligent homes, cybercommunications, security devices, wide-wire education, medical electronics, lighting electronics, wearable equipment, Internet-connected IOT

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