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FDD6N20TF TO252 N Trench 200V 4A mos field effect tube
FDD6N20TF TO252 N Trench 200V 4A mos field effect tube
FDD6N20TF TO252 N Trench 200V 4A mos field effect tube
FDD6N20TF TO252 N Trench 200V 4A mos field effect tube

FDD6N20TF TO252 N Trench 200V 4A mos field effect tube

ManufacturerShenzhen City Weiqua Semiconductor Ltd.
CategoryField effect tube (MOSFET)
Price1.63
BrandVBsemi / Microbian Semiconductor
ModelFDD6N20TF
CategoryInsulation fence (MOSFET)
Trench Type"N" Channel
Transmission modeEnhanced
PurposeS / Switch
Encapsulate the shapeSMD(SO) / Surface Cover
MaterialsN-FET SiliconN Trench
Main downstream platformebay, Amazon, wish, fast sell, stand-alone, LAZADA
Main distribution areasAfrica, Europe, South America, South-East Asia, North America, North-East Asia, Middle East
There's an authorized brand.Yes.
Whether or not to export a source of goods exclusively across bordersYes.
GoodsFDD6N20TF
Batch Number23+
CoverTO252

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