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NTGD4167C ±30V 2.6A N/P Trench SOT-23-6 MOS Field Effect Tube
NTGD4167C ±30V 2.6A N/P Trench SOT-23-6 MOS Field Effect Tube
NTGD4167C ±30V 2.6A N/P Trench SOT-23-6 MOS Field Effect Tube
NTGD4167C ±30V 2.6A N/P Trench SOT-23-6 MOS Field Effect Tube

NTGD4167C ±30V 2.6A N/P Trench SOT-23-6 MOS Field Effect Tube

ManufacturerShenzhen City, Zhang Huaiji Technology Co. Ltd.
CategoryField effect tube (MOSFET)
Price1.0
BrandWINSOK
ModelNTTGD4167C
CoverSOT-23-6L
Batch Number2020+
FET TypeN/ P Trench
Vds±30
Leaking of polar currents (Id)2.6
Leak-source conductive resistance (RDS On)N:90, P:170
Fence power (Vgs)12
Fence charge (Qg)3.7
Reverse recovery time1.5
Maximum deplete power0.9
Configure TypeEnhanced
Working temperature range-55°C-150°C
Install TypePaste
Application areaDomestic appliances

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